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Atomic Layer Deposition
  • Name of the equipment/facility: Atomic Layer Deposition

  • Model: PICOSUNTM R-200

  • Working Principle :

    Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called ). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials.

    Technical specification & Applications:

    KEY Features:

    • Capability to deposit dielectric oxides such as Al2O3, ZnO, HfO2, TiO2 .
    • The following materials can be deposited at < 100o C: Al2O3, ZnO, HfO2, TiO2.
    • Tools operate from RT to 500o C with heater elements located in the intermediate space between the reaction chamber and vacuum chamber walls.
    • Air cooled ALD reactor
    • ALD tool can accommodate wafers up to 200 mm diameter and small-medium sized 3D objects (max height ca. 130 mm).
    • Non-uniformity values of the following oxides are < ± 1 %. Some RECORD non-uniformity values as an example:Al2O3: 0.13%, ZnO:0.94%, TiO2:0.28%
    • Tool can handle liquid, solid and gas precursors.
    • The tool has 4 fully separated precursor lines and inlets.
    • cycle time ≤ 2 s can be achieved
    • It is suitable heating up to 300oC.


    • Semiconductor Engineering
    • Li-ion Batteries
    • Microelectromechanical systems (MEMS)
    • Conformal and nano-coatings
    • Fuel cells
    • Solar cells
    • Transistors
    • Drug Delivery
    • Tissue Engineering
    • Implant